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화합물 반도체 epi wafer

▼ Ⅲ-Ⅴ Compound 에피 웨이퍼

lGaAs나 InP 및 GaSb 기판 위에 고객이 요청하는 구조로 electronic 및 opto-electronics 에피를 성장합니다.

l제조사 고유의 in-growth (in-situ) sensor 기술로 고객의 요청에 따른 에피를 성장합니다.

Excellent Uniformity

•F-P dip variation < 1nm

Reflectivity Map of F-P Dip Across 940-VCSEL, 6” GaAs

•SB center variation < 3 nm

Reflectivity Map of DBR Side-Band Center Across 940-VCSEL, 6” GaAs

■ [제품] 에피 웨이퍼 종류

lGaAs based Products
•PHEMT (AlAs, InGaP Etch Stop)
•MHEMT

lInP based Products
•HBT (C-doped,Be-doped, GaAsSb)
•HEMT
•RTT, RTD

lSb based Products
•Type II SLS Photodetectors
•GaAsSb-base InP HBT
•Epi-ready GaSb Substrates

lMis-matched Epi
•III-V on Si
•III-V on Ge
•High In content InGaAs on Si

lOpto-electronics
•APD (Avalanche Photo Diode)
•Lasers (750nm to 1100nm)
•VCSEL
•PIN (GaAs, InP)
•QWIP
•Modulators
•Quantum Cascade Lasers

■ [제품] 적용분야

III-V Compound Semiconductor Product Matrix
구 분	RF, microwave	High Speed Digital	Optoelectronics
적용 분야	•무선통신 RF부품 •자동차 •국방	•High speed optical network •High frequency instrumentation	•Fiber optic network light sources and Photo-detectors
Device 구조	•GaAs pHEMT •InP HBT •GaAs mHEMT •InP HEMT	•InP SHBT/DHBT •GaAsSb DHBT •InP HEMT •GaAs mHEMT	•InP PIN/APD •VCSEL, Laser •Type-II SLS •QWIP, QCL •Modulator