사업분야
회사소개
PRODUCTS
HOME > 사업분야 > 소재 > 화합물 반도체
화합물 반도체  epi wafer
 Ⅲ-Ⅴ Compound 에피 웨이퍼
lGaAs InP GaSb 기판 위에 고객이 요청하는 구조로 electronicopto-electronics 에피를 성장합니다.
l제조사 고유의 in-growth (in-situ) sensor 기술로 고객의 요청에 따른 에피를 성장합니다.

 

 

Excellent Uniformity

F-P dip variation < 1nm

   Reflectivity Map of F-P Dip Across 940-VCSEL, 6” GaAs

SB center variation < 3 nm

   Reflectivity Map of DBR Side-Band Center Across 940-VCSEL, 6” GaAs

 

■  [제품]  에피 웨이퍼 종류

lGaAs based Products
  PHEMT (AlAs, InGaP Etch Stop)
 
MHEMT

lInP based Products
 
HBT (C-doped,Be-doped, GaAsSb)
 
HEMT
 
RTT, RTD

lSb based Products
 
Type II SLS Photodetectors
 
GaAsSb-base InP HBT
 
Epi-ready GaSb Substrates

lMis-matched Epi
 
III-V on Si
 
III-V on Ge
 
High In content InGaAs on Si

lOpto-electronics
 
APD (Avalanche Photo Diode)
 
Lasers (750nm to 1100nm)
 
VCSEL
 
PIN (GaAs, InP)
 
QWIP
 
Modulators
 
Quantum Cascade Lasers

■  [제품]  적용분야

 

 III-V Compound Semiconductor Product Matrix

  구 분

  RF, microwave

 

  High Speed Digital

  Optoelectronics

적용 분야

무선통신 RF부품
자동차
국방

High speed optical network
High frequency instrumentation

Fiber optic network light sources and Photo-detectors 

Device 구조

GaAs pHEMT
InP HBT
GaAs mHEMT
InP HEMT

InP SHBT/DHBT
GaAsSb DHBT
InP HEMT
GaAs mHEMT

InP PIN/APD
VCSEL, Laser
Type-II SLS
QWIP, QCL
Modulator

 

top