Excellent Uniformity
Reflectivity Map of F-P Dip Across 940-VCSEL, 6” GaAs
Reflectivity Map of DBR Side-Band Center Across 940-VCSEL, 6” GaAs
lGaAs
based Products
•PHEMT
(AlAs,
InGaP
Etch Stop)
•MHEMT
lInP based Products
•HBT (C-doped,Be-doped,
GaAsSb)
•HEMT
•RTT, RTD
lSb based Products
•Type II SLS Photodetectors
•GaAsSb-base
InP
HBT
•Epi-ready GaSb
Substrates
lMis-matched Epi
•III-V on Si
•III-V on Ge
•High In content InGaAs
on Si
lOpto-electronics
•APD (Avalanche Photo Diode)
•Lasers (750nm to 1100nm)
•VCSEL
•PIN (GaAs, InP)
•QWIP
•Modulators
•Quantum Cascade Lasers
III-V Compound Semiconductor Product Matrix |
|||
구 분 |
RF, microwave
|
High Speed Digital |
Optoelectronics |
적용 분야 |
•무선통신 RF부품 |
•High
speed optical network |
•Fiber optic network light sources and Photo-detectors |
Device 구조 |
•GaAs
pHEMT |
•InP
SHBT/DHBT |
•InP
PIN/APD |