● Series 50 Hollow Cathode Plasma Source 사양
• NW50 (KF50) vacuum connection.
• NW50 (KF50) nipple housing on request.
• 300 or 600 Watt maximum applied power.
• DC or 13.56 MHz RF operation.
• N, HN or DIN input voltage connectors, others on request.
• Male or female VCR gas input.
• Water cooling, 1-3 liters/min room temperature water (distilled or deionized preferable). Swagelok connections.
• Integrated matching box on request.
• 316 stainless is standard, but other cathode materials on request.
• Operation from 100 mTorr to > 10 Torr.
• Gases to date: NH3, N2, H2, Ar, O, NO, others possible depending on material compatibility.
• RF generator, matching network and matching network controller supplied on request. Will advise for modification of existing equipment.
● 8인치 wafer 위에 TiN film ALD 증착 공정에서 기존의 ICP 대신에
Series 50 Hollow cathode 플라즈마를 사용했을 떄의 결과(resistivity, GPC) 변화
● Si3N4 film ALD 증착 공정에서 기존의 ICP 대신에 Series 50 Hollow cathode
플라즈마를 사용했을 떄의 결과(GPC, RI, 및 N/Si ratio) 변화
● CCP를 적용한 Beneq system 과 Hollow Cathode 플라즈마를
적용한 Fiji system의 결과 비교
- Hollow Cathode 플라즈마 소스가 CCP에 비해 Film conductivity 측면에서
더 좋은 결과를 나타내고 있음.
● UHV series Hollow Cathode Plasma Source 사양
• Conflat fittings, sizing on request 3 and 3/8” and 4 and 5/8” most common.
• Nipple housing on request.
• 300 or 600 Watt maximum applied power.
• DC or 13.56 MHz RF operation.
• N, HN or DIN input voltage connectors, others on request.
• Male or female VCR gas input.
• Water cooling, 1-3 liters/min room temperature water (distilled or deionized preferable). Swagelok connections.
• Integrated matching box on request.
• 316 stainless is standard, but other cathode materials on request.
• Operation from 100 mTorr to >10 Torr.
• Gases to date: NH3, N2, H2, Ar, O, NO, others possible depending on material compatibility.
• RF generator, matching network and matching network controller supplied on request. Will advise for modification of existing equipment.
● TiN film ALD 증착 공정에서 기존의 ICP 대신에 UHV series Hollow cathode
플라즈마를 사용했을 떄의 결과(resistivity) 변화
ICP source (15nm) : 970 μΩ.cm
ECS Journal of Solid State Science and Technology, 3 (2014) P253
ICP source (20 nm) : 145 μΩ.cm
J. Vac. Sci. Technol. A 32 (2014) 031506
● LARGE area Hollow Cathode Plasma Source 사양
• Conversion of commercial and home built ALD systems.
• 300 and 600 watt systems , higher power on demand, a 3 kilowatt , 12” source
• 12” wafer diameter, plus larger on request.
• 300 watt systems may not require water cooling
• Oxides, nitrides, other
• Low oxygen contamination (no dielectrics)
• Cost effective
• High electron density – similar to or greater than inductively coupled and microwave plasma sources, up to 1013 cm-3 for some plasma conditions.
• Wide range of operating pressures (eg. from <50 mTorr to >5 Torr).
• Improved growth per cycle for many material systems
● 12inch diameter Hollow Cathode, 3000 W operation
● Series 16 Hollow Cathode Plasma Source 사양
• Max. 80 watt operation continuously, up to 100 watt in pulse mode.
• No water cooling. The system can get hot and present a heat hazard, air cooling can moderate this.
• Suitable for 2 to 4” wafers and smaller test samples.
• Oxides, nitrides, other
• Low oxygen contamination (no dielectrics)
• Cost effective
• High electron density of 1012 cm-3 or higher dependent on conditions.
• Wide range of operating pressures (eg. from < 200 mTorr to > 10 Torr).
• Improved growth per cycle for many material systems