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Hollow Cathode

  • Hollow Cathode Plasma Source
    - Hollow Cathode Plasma Source는 Hollow cathode(cathode의 hole)를 통해 플라즈마를 발생시키는 Remote 플라즈마 소스로, 기존 CCP나 ICP 플라즈마 소스에
    비해 더 높은 Plasma density 와 더 낮은 Plasma damage를 구현하며, Oxygen contamination이 거의 없는 특징을 가지고 있고, ALD, ALE, 그리고 CVD system에 효과적으로 사용될 수 있습니다.
  • RF Hollow Cathode 플라즈마 소스의 특징
    - Custom solutions from Meaglow Ltd.
    - ALD and MOCVD conversions
    - Scalable plasma source (more holes = greater area)
    - High electron density (>1x1012cm-3)
    - Low oxygen contamination for nitride processes
    - Less plasma damage than ICP
    - Quick on/off
    - Higher growth rates and better crystallinity than ICP for many processes
    - Nitrogen, hydrogen, ammonia, nitrous oxide, oxygen, argon all trialled to date.

SERIES 50

SERIES 50
  • NW50 vacuum flange 에 연결됨
  • ALD, Oxidation 및 PECVD에 적용
  • 최대 8” wafer까지 적용 가능

● Series 50 Hollow Cathode Plasma Source 사양

    • NW50 (KF50) vacuum connection. 

    • NW50 (KF50) nipple housing on request. 

    • 300 or 600 Watt maximum applied power. 

    • DC or 13.56 MHz RF operation. 

    • N, HN or DIN input voltage connectors, others on request. 

    • Male or female VCR gas input. 

    • Water cooling, 1-3 liters/min room temperature water (distilled or deionized preferable). Swagelok connections. 

    • Integrated matching box on request. 

    • 316 stainless is standard, but other cathode materials on request. 

    • Operation from 100 mTorr to > 10 Torr. 

    • Gases to date: NH3, N2, H2, Ar, O, NO, others possible depending on material compatibility. 

    • RF generator, matching network and matching network controller supplied on request. Will advise for modification of existing equipment. 

  • 8인치 wafer 위에 TiN film ALD 증착 공정에서 기존의 ICP 대신에
    Series 50 Hollow cathode 플라즈마를 사용했을 떄의 결과(resistivity, GPC) 변화

    ICP source: 1365 μΩ.cm, 0.94 A/cycle
    Hollow cathord source: 330 μΩ.cm, 1.14 A/cycle

  • Si3N4 film ALD 증착 공정에서 기존의 ICP 대신에 Series 50 Hollow cathode
    플라즈마를 사용했을 떄의 결과(GPC, RI, 및 N/Si ratio) 변화

  • CCP를 적용한 Beneq system 과 Hollow Cathode 플라즈마를
    적용한 Fiji system의 결과 비교
    Hollow Cathode 플라즈마 소스가 CCP에 비해 Film conductivity 측면에서
    더 좋은 결과를 나타내고 있음.

UHV SERIES

UHV SERIES
  • 3 and 3/8” 또는 4 and 5/8” conflat vacuum flange에 연결됨
  • 최대 8” wafer까지 적용 가능

● UHV series Hollow Cathode Plasma Source 사양

    • Conflat fittings, sizing on request 3 and 3/8” and 4 and 5/8” most common. 

    • Nipple housing on request. 

    • 300 or 600 Watt maximum applied power. 

    • DC or 13.56 MHz RF operation. 

    • N, HN or DIN input voltage connectors, others on request. 

    • Male or female VCR gas input. 

    • Water cooling, 1-3 liters/min room temperature water (distilled or deionized preferable). Swagelok connections. 

    • Integrated matching box on request. 

    • 316 stainless is standard, but other cathode materials on request. 

    • Operation from 100 mTorr to >10 Torr. 

    • Gases to date: NH3, N2, H2, Ar, O, NO, others possible depending on material compatibility. 

    • RF generator, matching network and matching network controller supplied on request. Will advise for modification of existing equipment. 

  • TiN film ALD 증착 공정에서 기존의 ICP 대신에 UHV series Hollow cathode
    플라즈마를 사용했을 떄의 결과(resistivity) 변화
    ICP source (15nm) : 970 μΩ.cm
    ECS Journal of Solid State Science and Technology, 3 (2014) P253
    ICP source (20 nm) : 145 μΩ.cm
    J. Vac. Sci. Technol. A 32 (2014) 031506

    HCP source: 57 μΩ.cm

LARGE AREA

LARGE AREA
  • 12” wafer 에 적용

● LARGE area Hollow Cathode Plasma Source 사양

    • Conversion of commercial and home built ALD systems. 

    • 300 and 600 watt systems , higher power on demand, a 3 kilowatt , 12” source 

    • 12” wafer diameter, plus larger on request. 

    • 300 watt systems may not require water cooling 

    • Oxides, nitrides, other 

    • Low oxygen contamination (no dielectrics) 

    • Cost effective 

    • High electron density – similar to or greater than inductively coupled and microwave plasma sources, up to 1013 cm-3 for some plasma conditions. 

    • Wide range of operating pressures (eg. from <50 mTorr to >5 Torr). 

    • Improved growth per cycle for many material systems 

  • 12inch diameter Hollow Cathode, 3000 W operation

Series 16

Series 16
  • NW16 vacuum flange 에 연결됨
  • 최대 4” wafer까지 적용 가능

● Series 16 Hollow Cathode Plasma Source 사양

    • Max. 80 watt operation continuously, up to 100 watt in pulse mode. 

    • No water cooling. The system can get hot and present a heat hazard, air cooling can moderate this. 

    • Suitable for 2 to 4” wafers and smaller test samples.

    • Oxides, nitrides, other 

    • Low oxygen contamination (no dielectrics) 

    • Cost effective 

    • High electron density of 1012 cm-3 or higher dependent on conditions. 

    • Wide range of operating pressures (eg. from < 200 mTorr to > 10 Torr). 

    • Improved growth per cycle for many material systems 

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